A p–n junction (Positive-Negative Junction) is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The “p” (positive) side contains an excess of holes, while the “n” (negative) side contains an excess of electrons. When the two sides are joined together, they form an electric field that acts to separate the charges and creates a potential barrier for any further diffusion of charge carriers across the junction.

The potential barrier at a p–n junction can be overcome by applying a voltage to the junction that is greater than the built-in voltage V_bi. This process is called forward bias and allows minority carriers from each side to cross the depletion region and combine with majority carriers on the other side. As more minority carriers cross the depletion region, it becomes increasingly easier for them to do so until eventually there are enough carrier pairs present on both sides of the depletion region to allow current flow through the device.

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